|
||||
|
|
|
|
|
|
|
|
|
|
Stanford University 1956 - 1961 Graduate Student: Initially worked on measurement of high frequency characteristics of transistors, and then worked on silicon solar cells, publishing the first paper on solar cell spectral response. His PhD thesis was the first work on the measurement of surface states using MOS capacitors. It is one of the most widely used measurements in the industry and resulted in a very widely referenced 1962 paper in Solid State Electronics, and the technique is now widely known as “the Terman Method”. IBM Research Division 1961 - 1963 Research Staff Member: Worked on the design of a computer which directly implemented a high-level FORTRAN-like language directly in hardware. 1963 -1964 RSM/Manager: Managed group which developed a magnetic film read only memory. 1964 - 1973 RSM/Manager: Pioneering work in MOS memory. Initiated the first work in IBM on MOSFET memory. Involved in the program which led to the first IBM MOSFET memory product (received IBM Outstanding Contribution Award). Co-inventor of the Four-Transistor memory cell used in IBM and industry products (received IBM Outstanding Invention Award and IBM Corporate Award). Invented a method of stabilizing MOSFET device threshold voltage used in IBM products (received IBM Outstanding Invention Award and IBM Corporate Award). Invented a high speed three-phase shift register used extensively in early IBM memory typewriters (received IBM Outstanding Invention Award). His 1971 invited paper in the IEEE Proceedings on MOSFET memory circuits was widely referenced and is considered a classic paper. 1973 - 1979 RSM/Manger: Worked on MOSFET and CCD analog, logic, and memory circuits. Co-inventor and developer of the first MOSFET comparator with 1mV sensitivity. Developed CCD multi-level storage memory, studied soft errors in memory systems. 1979 - 1981 Member of Technical Planning Staff, IBM Research Division: Temporary assignment on the Research Division Staff, involving monitoring progress and establishing directions and goals for the Division. 1981 - 1991 Manager/Second-line Manager/Senior Manager: Over this period, managed various groups totaling up to 25 - 30 people working on MOSFET and bipolar technology, circuits, and processor design. Achievements by these groups included: development of a 1 micron product MOS technology which formed the basis for the IBM 1 micron product technology; development of the high speed multiplier used in the IBM AS/6000 product line; design and development of high speed bipolar memories and logic circuits with industry leading performance; design of a series of S/370 architecture microprocessors which impacted IBM products; working with the product division on the IBM DRAM product technologies from 4Mb on, and which are still in use by licensees of the IBM DRAM process; invention of the Substrate-Plate DRAM memory cell structure used in all IBM and IBM licensee 4Mb and beyond DRAM products and still widely used in the industry; design of a series of the world’s fastest DRAMS, with performance 2-3X faster than conventional DRAMS, which impacted IBM DRAM products; design of a series of NMOS and CMOS SRAMS with record-setting performance, culminating in a 1990 paper which received an ISSCC Outstanding Paper Award, and which was used in IBM mainframe computer products. During this period, he received an IBM Outstanding Contribution Award for his work on what became the IBM 1 micron product CMOS technology, and an IBM Outstanding Invention Award and IBM Corporate Award as co-inventor of the Substrate-Plate DRAM memory cell. 1991 - 1993 Senior Member, Research Division Technical Planning Staff: Temporary assignment dealing with the technical planning, directing, and goal setting for the Research Division. 1993 - 1994 Manager: Directing group designing very high speed CMOS processors. 1994 - 2001 Program Manager: Design of CMOS high speed and low power systems. 2003 - 2006 Associate Director, Systems Department, IBM Research Division 2006 Retired from IBM on January 31, 2006 |
